Mr.Panithan Srisinsuphya and Mr.Karn Rongrueangkul for being selected to attend the 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018) at Shanghai, China in which the conference is held between 3rd to 7th of September 2018. The main purpose of this conference is to provide a prominent international forum for reporting new developments in the areas of fundamental and applied molecular beam epitaxy research, with participants from all around the world, such as USA, China, Japan, Germany and Russia. The NANO students provided an oral presentation with the title of “InSb/InAs Quantum Nano-Stripes Grown by Molecular Beam Epitaxy and Its Photoluminescence at Mid-Infrared Wavelength”. Their work, under supervision of Dr. Aniwat Tandaechanurat, a lecturer of NANO program at ISE, is the fabrication of nanostructured semiconductors using Molecular Beam Epitaxy. By applying the knowledge of quantum mechanics, the fabricated nanostructure can be used as a source for mid-infrared devices, allowing for the enhancement of mid-infrared sensing devices.